NGTB25N120LWG - 1200 V / 25 A IGBT in TO-247

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. 

Offering both low on−state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.

 

NGTB25N120L-D Features

  • Low saturation voltage using Trench with Field Stop Technology
  • Low switching loss reduces system power dissipation
  • Low gate charge
  • 5 µs short−circuit capability

NGTB25N120L-D Applications

  • Inverter welding machines
  • Microwave ovens
  • Industrial switching
  • Motor control inverter

ONSemiconductor

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