With the new 650 V CoolMOS™ CFD2 Infineon launches its second generation of its market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. 

The new CFD2 devices are the successor of 600 V CFD with improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this product a clear advantage in comparison with competitor parts.

CFD2 is the first 650 V MOSFET technology with integrated fast body diode on the market. The product portfolio provides all benefits of fast switching superjunction MOSFETs offering better light load effciency, reduced gate charge, easy implementation and outstanding reliability. 

The new CFD2 technology offers a price advantage compared to its predecessor 600 V CFD and is the best choice for resonant switching applications.