High Density Devices for the Automotive, Medical, and Consumer Markets

The EEPROM devices from On Semiconductor include the high density 512 kb CAT24C512 and 1 Mb CAT24M01, which have a 1.8...5.5 V supply voltage range. The CAT24C512 and CAT24M01 employ 256 byte and 128 byte page write buffers respectively. Both devices support Standard 100 kHz, Fast 400 kHz, and Fast-Plus 1 MHz serial I²C protocols. These devices are manufactured on a 0.18 µm low power CMOS process.

In addition, On Semiconductor introduced a series of AEC-Q100 qualified EEPROMs for automotive designs. These devices have a 2.5...5.5 V supply voltage range and support the standard and fast I²C protocols. Both the 64 kb CAV24C64 and the 32 kb CAV24C32 feature 32 byte page write buffers, while the 2 kb CAV24C02, 4 kb CAV24C04, 8 kb CAV24C08 and 16 kb CAV24C16 incorporate a 16 byte page write buffer.  These devices are manufactured on a 0.35 µm process.

All of the new EEPROM devices feature a 100 year data retention period and support for 1,000,000 program/erase cycles.  The operating temperature range of these serial EEPROMs is −40...+125 °C.