High-Performance NextPower 25 V & 30 V MOSFETs in LFPAK

PSMN0R9-25YLC / PSMN1R0-30YLC

The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise.

Many competitors focus only on optimising R_DS(on) and Q_g. As Q_g gets lower then losses due to Q_oss and Q_gd become more significant. NextPower uses Superjunction technology to provide the optimum balance between low R_DS(on), low Q_oss, low Q_g(tot) and Q_gd to give optimum switching performance.

NextPower delivers superior SOA performance, and low Q_oss reduces the losses between the output DRAIN & SOURCE terminals. NextPower also delivers the lowest R_DS(on) with sub 1 mΩ types at both 25 V and 30 V. LFPAK packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other Power-SO8 vendors.

The unique benefits of LFPAK make it the best package choice for demanding applications or where high-reliability is required. It also allows for visual inspection, reducing the need for costly X-ray equipment to detect solder defects as is common with QFN style Power-SO8 packages.

PSMN0R9-25YLC / PSMN1R0-30YLC Key Features & Benefits

High efficiency in power switching applications
Industry’s lowest R_DS(on) Power-SO8 - less than 1 mΩ at 25 V and 30 V
Low Q_oss for reduced output losses between DRAIN & SOURCE
Low Q_gd for reduced switching losses and high frequency switching
20 V rated GATE provides better tolerance to voltage transients than lateral MOSFET types
Superior ‘Safe Operating Area’ performance compared to other Trench MOSFET vendors
Optimised for 4.5 V gate drive voltage
Optimum switching performance under light & heavy load conditions
LFPAK package for compatibility with other vendor Power-SO8 types
Eliminates costly X-ray inspection – LFPAK solder joints can be optically inspected