PSMN - 30 V Trench 6 Logic Level MOSFETs
PSMN - 30 V Trench 6 Logic Level MOSFETs
NXP’s range of 30 V Trench 6 logic level MOSFETs deliver significant improvements in efficiency when used in switching power supply applications, DC-DC converters, POL converters and power OR-ing. The LFPAK package delivers high current capability and low thermal resistance in a 5mm x 6mm Power SO8 footprint making the new range of MOSFETs the natural choice for demanding power-switching applications.
LFPAK (Loss Free PAcKage) delivers compact power in a surface-mount package. It provides superior electrical & thermal resistance as well as low inductance, while maintaining the widely accepted SO8 footprint. LFPAK is compatible with ‘visual inspection’ techniques unlike many other Power-SO8 devices. The combination of Trench 6 silicon and LFPAK package delivers higher operating efficiencies, improved thermal characteristics and high power density which are essential for today’s high performance power management applications.
Features
- Low ON resistance – RDS(ON) typical from 1.2 mΩ (PSMN1R7-30YL)
- Low thermal resistance - Rth(jc) from 1.1 °K/W
- Low package inductance - typically 1.1 nH
- Footprint compatible with SO8 (5 mm x 6 mm)
- Low profile - package height 1.1 mm
- Recommended for switching frequencies up to 1 MHz
Key Applications
- Voltage regulator
- Motor control
- OR-ing
- Load switching
- Li-ion battery protection
- LED lighting / dimming
