STPSC806D/1006D - 600 V SIC Diodes
STPSC806D/1006D - 600 V SIC Diodes
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Particularly suitable in PFC boost diode function
Key Applications
- PFC boost converters
- Freewheeling in motor drives
- Industrial applications requiring very high performance
More Information
For additional information please
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