STW88N65M5 - MDmesh™ V Power MOSFET in TO-247
STMicroelectronics' STW88N65M5 MDmesh™ V MOSFET features the industry’s lowest on-state resistance for 650 V devices in the standard TO-247 package, at 0.029 Ohms. This betters ST’s previous industry benchmark of 0.038 Ohms, also set by an MDmesh™ V device. This empowers end application designers to increase energy efficiency by directly replacing MOSFETs of higher resistance or to use fewer devices in parallel and so reduce assembly sizes and Bill-Of-Materials (BOM) costs.
The 650 V voltage rating of ST’s STW88N65M5 and other MDmesh™ V devices provides a greater safety margin than that offered by 600 V devices from competing manufacturers. This increases the MOSFET’s ability to withstand voltage surges commonly present on AC power lines. ST’s market-proven MDmesh™ V technology is available in a vast range of packages including Max247, TO-247, D2PAK, TO-220/FP, PowerFLAT 8x8 HV and I2PAK.
STW88N65M5 Features
- Worldwide best RDS(on) in TO-247
- Higher VDSS rating
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
STW88N65M5 Applications
High efficiency switching applications:
- Servers
- PV inverters
- Telecom infrastructure
- Multi kW battery chargers.


