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STW88N65M5 - MDmesh™ V Power MOSFET in TO-247

ST STW88N65M5-iconSTMicroelectronics' STW88N65M5 MDmesh™ V MOSFET features the industry’s lowest on-state resistance for 650 V devices in the standard TO-247 package, at 0.029 Ohms. This betters ST’s previous industry benchmark of 0.038 Ohms, also set by an MDmesh™ V device. This empowers end application designers to increase energy efficiency by directly replacing MOSFETs of higher resistance or to use fewer devices in parallel and so reduce assembly sizes and Bill-Of-Materials (BOM) costs.


The 650 V voltage rating of ST’s STW88N65M5 and other MDmesh™ V devices provides a greater safety margin than that offered by 600 V devices from competing manufacturers. This increases the MOSFET’s ability to withstand voltage surges commonly present on AC power lines. ST’s market-proven MDmesh™ V technology is available in a vast range of packages including Max247, TO-247, D2PAK, TO-220/FP, PowerFLAT 8x8 HV and I2PAK. 

 

STW88N65M5 Features

  • Worldwide best RDS(on) in TO-247 
  • Higher VDSS rating 
  • Higher dv/dt capability 
  • Excellent switching performance 
  • Easy to drive 
  • 100% avalanche tested 

STW88N65M5 Applications

High efficiency switching applications: 

  • Servers
  • PV inverters
  • Telecom infrastructure
  • Multi kW battery chargers.

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